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Dry etching characteristics of ZnO thin films for the optoelectronic device by using inductively coupled plasma
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Joo, Y.-H. | - |
| dc.contributor.author | Woo, J.-C. | - |
| dc.contributor.author | Kim, C.-I. | - |
| dc.date.available | 2019-05-29T09:33:14Z | - |
| dc.date.issued | 2012-02 | - |
| dc.identifier.issn | 1229-7607 | - |
| dc.identifier.issn | 2092-7592 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/20862 | - |
| dc.description.abstract | In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to SiO 2) of ZnO thin films in N 2/Cl 2/Ar inductivity coupled plasma. A maximum etch rate and selectivity of 108.8 nm/min and, 3.21, respectively, was obtained for ZnO thin film at a N 2/Cl 2/Ar gas mixing ratio of 15:16:4 sccm. The plasmas were characterized by optical emission spectroscopy. The x-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment. An accumulation of low volatile reaction products on the etched surface was also shown. Based on this data, an ion-assisted chemical reaction is proposed as the main etch mechanism for plasmas containing Cl 2. © 2012 KIEEME. All rights reserved. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | 한국전기전자재료학회 | - |
| dc.title | Dry etching characteristics of ZnO thin films for the optoelectronic device by using inductively coupled plasma | - |
| dc.title.alternative | Dry Etching Characteristics of ZnO Thin Films for the Optoelectronic Device by Using Inductively Coupled Plasma | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.4313/TEEM.2012.13.1.6 | - |
| dc.identifier.bibliographicCitation | Transactions on Electrical and Electronic Materials, v.13, no.1, pp 6 - 9 | - |
| dc.identifier.kciid | ART001633167 | - |
| dc.description.isOpenAccess | N | - |
| dc.identifier.scopusid | 2-s2.0-84863260666 | - |
| dc.citation.endPage | 9 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 6 | - |
| dc.citation.title | Transactions on Electrical and Electronic Materials | - |
| dc.citation.volume | 13 | - |
| dc.type.docType | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.subject.keywordAuthor | Cl 2 | - |
| dc.subject.keywordAuthor | ICP | - |
| dc.subject.keywordAuthor | OES | - |
| dc.subject.keywordAuthor | XPS | - |
| dc.subject.keywordAuthor | ZnO | - |
| dc.subject.keywordPlus | Coupled plasma | - |
| dc.subject.keywordPlus | Etch mechanism | - |
| dc.subject.keywordPlus | Etch rates | - |
| dc.subject.keywordPlus | Etched surface | - |
| dc.subject.keywordPlus | Etching characteristics | - |
| dc.subject.keywordPlus | Gas mixing ratio | - |
| dc.subject.keywordPlus | ICP | - |
| dc.subject.keywordPlus | OES | - |
| dc.subject.keywordPlus | Oxide bonds | - |
| dc.subject.keywordPlus | Volatile reactions | - |
| dc.subject.keywordPlus | ZnO | - |
| dc.subject.keywordPlus | ZnO thin film | - |
| dc.subject.keywordPlus | Emission spectroscopy | - |
| dc.subject.keywordPlus | Inductively coupled plasma | - |
| dc.subject.keywordPlus | Ion bombardment | - |
| dc.subject.keywordPlus | Metallic films | - |
| dc.subject.keywordPlus | Optoelectronic devices | - |
| dc.subject.keywordPlus | Silicon compounds | - |
| dc.subject.keywordPlus | X ray photoelectron spectroscopy | - |
| dc.subject.keywordPlus | Zinc oxide | - |
| dc.subject.keywordPlus | Optical films | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
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