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Dry etching characteristics of ZnO thin films for the optoelectronic device by using inductively coupled plasmaDry Etching Characteristics of ZnO Thin Films for the Optoelectronic Device by Using Inductively Coupled Plasma
- Authors
- Joo, Y.-H.; Woo, J.-C.; Kim, C.-I.
- Issue Date
- Feb-2012
- Publisher
- 한국전기전자재료학회
- Keywords
- Cl 2; ICP; OES; XPS; ZnO
- Citation
- Transactions on Electrical and Electronic Materials, v.13, no.1, pp 6 - 9
- Pages
- 4
- Journal Title
- Transactions on Electrical and Electronic Materials
- Volume
- 13
- Number
- 1
- Start Page
- 6
- End Page
- 9
- ISSN
- 1229-7607
2092-7592
- Abstract
- In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to SiO 2) of ZnO thin films in N 2/Cl 2/Ar inductivity coupled plasma. A maximum etch rate and selectivity of 108.8 nm/min and, 3.21, respectively, was obtained for ZnO thin film at a N 2/Cl 2/Ar gas mixing ratio of 15:16:4 sccm. The plasmas were characterized by optical emission spectroscopy. The x-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment. An accumulation of low volatile reaction products on the etched surface was also shown. Based on this data, an ion-assisted chemical reaction is proposed as the main etch mechanism for plasmas containing Cl 2. © 2012 KIEEME. All rights reserved.
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