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Raman spectroscopy of CuIn1-xGaxSe2 for in-situ monitoring of the composition ratio
- Authors
- Choi, In-Hwan
- Issue Date
- Apr-2011
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Copper indium gallium diselenide; Copper indium diselenide; Raman spectroscopy; Metal organic chemical vapor deposition
- Citation
- THIN SOLID FILMS, v.519, no.13, pp 4390 - 4393
- Pages
- 4
- Journal Title
- THIN SOLID FILMS
- Volume
- 519
- Number
- 13
- Start Page
- 4390
- End Page
- 4393
- ISSN
- 0040-6090
- Abstract
- Metal organic vapor deposition (MOCVD) is a well known method for preparing high quality and large area CuIn1-xGaxSe2 (CIGS) absorber layers. Some in-situ non-contact monitoring systems are needed when CIGS absorber layers are manufactured in industry. In this study, CuInSe2 (CIS) and CIGS thin films with different composition ratios, [Cu]/[In + Ga], were prepared by MOCVD using [Me2In(mu-SeMe)](2), hexafluoroacetylacetonate Cu(I) (3,3-dimethyl-1-butene), trimethyl gallium and dimethyle diselenide as the In-Se single source, Cu, Ga and Se precursors, respectively. The Raman shift spectra of the films with various composition ratios were analyzed to produce a basic algorithm that can determine the composition ratios of CIS and CIGS thin films indirectly. (c) 2011 Elsevier B.V. All rights reserved.
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