Effects of metal stacks and patterned metal profiles on the electromigration characteristics in super-thin AlCu interconnects for sub-0.13 mu m technology
- Authors
- Lee, Min Hyung; Kwon, Yong Min; Pyo, Sung Gyu; Lee, Han Choon; Han, Jae-Won; Paik, Kyung-Wook
- Issue Date
- Mar-2011
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- AlCu; Interconnects; Electromigration; Current crowding; AlCu underlayer; Sidewall profile
- Citation
- THIN SOLID FILMS, v.519, no.11, pp 3906 - 3913
- Pages
- 8
- Journal Title
- THIN SOLID FILMS
- Volume
- 519
- Number
- 11
- Start Page
- 3906
- End Page
- 3913
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/21661
- DOI
- 10.1016/j.tsf.2011.01.268
- ISSN
- 0040-6090
- Abstract
- The electromigration (EM) characteristics of super-thin aluminum-copper alloy (AlCu) interconnects for sub-0.13 mu m complementary metal-oxide-semiconductor logic technology were investigated by varying the AlCu underlayers and etched sidewall profile ofAlCu wire. Super-thin AlCu wire with a Ti/TiN underlayer and a smooth etched sidewall profile was confirmed to have the best EM resistance in terms of the mean-time-to-failure (MTTF) and the failure distribution. The Ti/TiN underlayer is believed to lead to a longer MTTF by dramatically reducing the effective current density at the super-thin AlCu film in the entire of EM test line with a smaller formation of TiAl3 at the TiN/AlCu interface. The smooth etched sidewall profile is considered to induce a steeper EM failure distribution by removing the early EM failure at the rough sidewall of aluminum. In terms of the location of EM-induced voids, the super-thin AlCu film inhibits the formation of EM-induced voids directly under the tungsten via by insignificant current crowding at the via-metal line corner. (C) 2011 Elsevier B.V. All rights reserved.
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