Atomic Structures of a Monolayer of AlAs, GaAs, and InAs on Si(111)open access
- Authors
- Lee, Geunjung; Yoon, Young-Gui
- Issue Date
- Aug-2010
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- AlAs; GaAs; InAs; Si; 111; Atomic structure
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.57, no.2, pp 251 - 254
- Pages
- 4
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 57
- Number
- 2
- Start Page
- 251
- End Page
- 254
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/22282
- DOI
- 10.3938/jkps.57.251
- ISSN
- 0374-4884
- Abstract
- We study atomic structures of a monolayer of AlAs, GaAs, and In As on a Si(111) substrate from first-principles. The surface with the stacking sequence of ...SiSiMAsSiAs is energetically more stable than the surface with the stacking sequence of ...SiSiSiAsMAs, where M is Al, Ga., or In. The atomic structure of the three top layers of the low-energy surfaces are quite robust, irrespective of and the atomic structure of the AlAsSiAs terminated surface and that of the GaAsSiAs terminated surface are very similar. For the high-energy AsMAs terminated surfaces, the broken local tetrahedral symmetry plays an important role in the atomic structures. The calculated atomic structures of In As on the Si(111) substrate depart most from the structure of crystalline Si.
- Files in This Item
-
- Appears in
Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.