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The effects of staggered bandgap in the InP/CdSe and CdSe/InP core/shell quantum dots
- Issue Date
- Jun-2010
- Publisher
- ACADEMIC PRESS INC ELSEVIER SCIENCE
- Keywords
- Type-II quantum dots; Core-shell; InP; CdSe; Bandgap
- Citation
- JOURNAL OF COLLOID AND INTERFACE SCIENCE, v.346, no.2, pp 347 - 351
- Pages
- 5
- Journal Title
- JOURNAL OF COLLOID AND INTERFACE SCIENCE
- Volume
- 346
- Number
- 2
- Start Page
- 347
- End Page
- 351
- ISSN
- 0021-9797
1095-7103
- Abstract
- New type-II structures of CdSe/InP and InP/CdSe core-shell nanocrystals which have staggered bandgap alignment were fabricated. Using a simple model for the wave function for electrons and holes in InP/CdSe and CdSe/InP core/shell nanocrystals showed the wave function of the electron and hole spread into the shell, respectively. The probability density of the InP/CdSe and CdSe/InP core/shell QDs also showed a similar tendency. As a result, the structure exhibits increased delocalization of electrons and holes, leading to a red-shift in absorption and emission. Quantum yield increased in the InP/CdSe, however decreased in the CdSe/InP. The reason may be due to the surface trap and high activation barrier for de-trapping in the InP shell. (C) 2010 Elsevier Inc. All rights reserved.
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