Ferroelectric properties of Bi3.25La0.75Ti3O12 films using HfO2 as buffer layers for nonvolatile-memory field-effect transistors
- Authors
- Kim, Kyoung-Tae; Kim, Gwan-Ha; Woo, Jong-Chang; Kim, Chang-Ii
- Issue Date
- Sep-2008
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.26, no.5, pp 1178 - 1181
- Pages
- 4
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 26
- Number
- 5
- Start Page
- 1178
- End Page
- 1181
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/23632
- DOI
- 10.1116/1.2960555
- ISSN
- 0734-2101
- Abstract
- The ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin film and HfO2 layer were fabricated using both metal-organic decomposition and atomic-layer deposition methods. The HfO2 thin film was deposited as a buffer layer between Si substrate and BLT thin films. The electrical and structural properties of the metal-ferroelectric-insulator-semiconductor (MFIS) structure were investigated by varying the HfO2 layer thickness. Transmission electron microscopy showed no interdiffusion and reaction occurring when the HfO2 film is used as a buffer layer. The width of the memory window in the capacitance-voltage curves for the MFIS structure was decreased with increasing thickness of the HfO2 buffer layer. The experimental results showed that the BLT-based MFIS structure is suitable for nonvolatile-memory field-effect transistors with a large memory window. (c) 2008 American Vacuum Society.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.