Detailed Information
Cited 8 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Etching characteristics and mechanisms of the MgO thin films in the CF4/Ar inductively coupled plasma
- Authors
- Efremov, A.; Woo, J. C.; Kim, G. H.; Kim, C. I.
- Issue Date
- Apr-2007
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- MgO; etch rate; dissociation; ionization; sputtering; desorption; etch mechanism
- Citation
- MICROELECTRONIC ENGINEERING, v.84, no.4, pp 638 - 645
- Pages
- 8
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 84
- Number
- 4
- Start Page
- 638
- End Page
- 645
- ISSN
- 0167-9317
- Abstract
- The etching characteristics and mechanisms of MgO thin films in CF4/Ar inductively coupled plasma were investigated. It was found that the changes in gas mixing ratio as well as in gas pressure result in a non-monotonic behavior of the MgO etch rate. Plasma diagnostics by Langmuir probe indicated the noticeable sensitivity of both electron temperature and density to the variations of the processing parameters. The combination of 0-dimensional plasma model with the model of surface kinetics showed that the reason of the nonmonotonic etch rate is connected with the concurrence of physical and chemical pathways in ion-assisted chemical reaction. (c) 2007 Elsevier B.V. All rights reserved.
- Files in This Item
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.