Field-effect ion-transport devices with carbon nanotube channels: Schematics and simulations
- Authors
- Lee, JY; Kang, JW; Byun, KH; Kang, ES; Hwang, HJ; Lee, JH; Lee, HJ; Kwon, OK; Kim, YM
- Issue Date
- Aug-2004
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- ionic field-effect memory and transistor; carbon nanotube; nanochannel; electro-fluidic flow
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.2, pp 432 - 437
- Pages
- 6
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 45
- Number
- 2
- Start Page
- 432
- End Page
- 437
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/24799
- ISSN
- 0374-4884
1976-8524
- Abstract
- We investigated field-effect ion-transport devices based on carbon nanotubes by using classical molecular dynamics simulations under applied external force fields, and we present model schematics that can be applied to the nanoscale data storage devices and unipolar ionic field-effect transistors. As the applied external force field is increased, potassium ions rapidly flow through the nanochannel. Under low external force fields, thermal fluctuations of the nanochannels affect tunneling of the potassium ions whereas the effects of thermal fluctuations are negligible under high external force fields. Since the electric current conductivity increases when potassium ions are inserted into fullerenes or carbon nanotubes, the field effect due to the gate, which can modify the position of the potassium ions, changes the tunneling current between the drain and the source.
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