Simple model for ion-assisted etching using CL2-Ar inductively coupled plasma: Effect of gas mixing ratio
- Authors
- Efremov, AM; Kim, DP; Kim, CI
- Issue Date
- Jun-2004
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- dissociation; etch mechanism; ion-assisted etching ionization; volume and surface kinetics
- Citation
- IEEE TRANSACTIONS ON PLASMA SCIENCE, v.32, no.3, pp 1344 - 1351
- Pages
- 8
- Journal Title
- IEEE TRANSACTIONS ON PLASMA SCIENCE
- Volume
- 32
- Number
- 3
- Start Page
- 1344
- End Page
- 1351
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/24838
- DOI
- 10.1109/TPS.2004.828413
- ISSN
- 0093-3813
1939-9375
- Abstract
- In this paper, we investigated the relationships between Cl-2-Ar mixing ratio, plasma parameters, plasma chemistry and etching kinetics using a combination of experimental investigations and modeling. Modeling of plasma chemistry was represented by zero-dimensional quasi-stationary model assuming electron energy distribution to be close to Maxwellian. For the surface kinetics, we used the simplified model based on the theory of active surface sites. The model confirmed the possibility of nonmonotonic behavior of etch rate behavior in the system with monotonic changes of fluxes of active species.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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