Etching characteristics of manganese-doped zinc sulfide film using Cl-2/CF4 inductively coupled plasma
- Authors
- Yun, SJ; Kwon, KH; Lee, YE; Kim, CI
- Issue Date
- May-2004
- Publisher
- INST PURE APPLIED PHYSICS
- Keywords
- ICP; etch; zinc sulfide; manganese; CF4; Cl-2
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, no.5A, pp 2716 - 2720
- Pages
- 5
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
- Volume
- 43
- Number
- 5A
- Start Page
- 2716
- End Page
- 2720
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/24853
- DOI
- 10.1143/JJAP.43.2716
- ISSN
- 0021-4922
- Abstract
- The etching characteristics of manganese-doped zinc sulfide (ZnS:Mn) films were investigated using the inductively coupled plasma (ICP) of Cl-2/CF4 gas mixture. The chemical surface reaction of ZnS:Mn etching with Cl-2/CF4 ICP plasma was studied by plasma analysis using the Langmuir probe (LP) method and optical emission spectroscopy (OES), and surface analysis using X-ray photoelectron spectroscopy (XPS). The maximum ion saturation current was obtained with a gas mixture of 30% CF4-70% Cl-2 and the ion current of pure Cl plasma was higher than that of pure CF4-plasma. The etch rate of ZnS gradually decreased with increasing flow rate of CF4 gas at a fixed total flow rate. XPS indicated that Mn had accumulated on the surface after etching of the ZnS:Mn (0.39 wt.%) layer using Cl-2 plasma. The OES analysis Of Cl-2/CF4 plasma revealed the presence of C-Cl and CF2 radicals as well as Cl and F atoms.
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