The etching characteristics of SrBi2Ta2O9 thin film in CF4/Ar plasma using magnetically enhanced inductively coupled plasma
- Authors
- Kim, DP; Kim, CI
- Issue Date
- Apr-2001
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- SrBi2Ta2O9; MEICP; XPS; SIMS; plasma etching
- Citation
- THIN SOLID FILMS, v.385, no.1-2, pp 162 - 166
- Pages
- 5
- Journal Title
- THIN SOLID FILMS
- Volume
- 385
- Number
- 1-2
- Start Page
- 162
- End Page
- 166
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/25225
- DOI
- 10.1016/S0040-6090(01)00761-1
- ISSN
- 0040-6090
- Abstract
- SrBi2Ta2O9 (SBT) thin films were etched with a varying CF4/Ar gas mixing ratio in a magnetically enhanced inductively coupled plasma system while a r.f. power, a d.c. bias voltage, and a chamber pressure were fixed. When the samples were etched at a r.f. power of 600 W, a d.c.-bias voltage of - 300 V, a chamber pressure of 10 mtorr and a CF4(10)/Ar(90) gas mixing ratio, the etch rare of SET thin film was 1650 Angstrom /min and the selectivity of SET thin film to photoresist and SiO2 were 0.89 and 0.6, respectively. The chemical reactions on the etched surface were examined with X-ray photoelectron spectroscopy and secondary ion mass spectrometry. From these results, it can be concluded: Sr interacted with the F radical, but remained at the surface due to nonvolatility of SrFx; Bi was removed by Ar ion-bombardment rather than by chemical interaction with the F radical and Ta was etched by interacting with the F radical with the help of Ar ion-bombardment to break a Sr-Ta-O bond. (C) 2001 Elsevier Science B.V. All rights reserved.
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