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Performance of RF MEMS switches at low temperatures
- Authors
- Su, H.T.; Llamas-Garro, I.; Lancaster, M.J.; Prest, M.; Park, J.-H.; Kim, J.-M.; Baek, C.-W.; Kim, Y.-K.
- Issue Date
- 2006
- Citation
- Electronics Letters, v.42, no.21, pp 1219 - 1221
- Pages
- 3
- Journal Title
- Electronics Letters
- Volume
- 42
- Number
- 21
- Start Page
- 1219
- End Page
- 1221
- ISSN
- 0013-5194
1350-911X
- Abstract
- The actuation voltage of microelectromechanical system (MEMS) metal switches was investigated at temperatures ranging from 10 to 290K. The investigation shows a 50 increase in the actuation voltage at low temperature. A comparison has been made using a published model and showed similar increment of actuation voltage at low temperature. © The Institution of Engineering and Technology 2006.
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Related Researcher
- Baek, Chang Wook
- 창의ICT공과대학 (전자전기공학부)