Development of a Point-of-Care Testing Platform With a Nanogap-Embedded Separated Double-Gate Field Effect Transistor Array and Its Readout System for Detection of Avian Influenza
- Authors
- Im, Maesoon; Ahn, Jae-Hyuk; Han, Jin-Woo; Park, Tae Jung; Lee, Sang Yup; Choi, Yang-Kyu
- Issue Date
- Feb-2011
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Avian influenza (AI); biosensor; field-effect transistor (FET); nanogap; point-of-care testing (POCT); silica-binding proteins (SBP)
- Citation
- IEEE SENSORS JOURNAL, v.11, no.2, pp 351 - 360
- Pages
- 10
- Journal Title
- IEEE SENSORS JOURNAL
- Volume
- 11
- Number
- 2
- Start Page
- 351
- End Page
- 360
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/27730
- DOI
- 10.1109/JSEN.2010.2062502
- ISSN
- 1530-437X
- Abstract
- Label-free electrical detection of avian influenza (AI) is demonstrated for the development of a point-of-care testing (POCT) platform. For a new POCT platform, a novel field effect transistor (FET)-based biosensor array was fabricated with conventional complementary metal-oxide-semiconductor (CMOS) technology. Nanogap-embedded separated double-gate FETs (nanogap-DGFETs) were realized in a 6 x 6 array as a biosensor cartridge. Moreover, the low-noise readout circuit was designed and fabricated using a 0.35-mu m standard CMOS process. The AI antigen and antibody were bound with the aid of silica-binding proteins (SBP) in the nanogap of the biosensor device. Because the gate dielectric constant was increased by the immobilized biomolecules, the threshold voltage of the nanogap-DGFET was reduced while the drain-to-source current was enhanced. Drain-to-source currents of the nanogap-DGFET array were successfully acquired using the fabricated readout circuitry and measurement setup. This platform is suitable for a simple and effective label-free detection of AI in POCT applications.
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Collections - College of Natural Sciences > Department of Chemistry > 1. Journal Articles
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