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Investigation of Size Dependence on Sensitivity for Nanowire FET Biosensors

Authors
Ahn, Jae-HyukChoi, Sung-JinHan, Jin-WooPark, Tae JungLee, Sang YupChoi, Yang-Kyu
Issue Date
Nov-2011
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Biosensor; capacitive model; double gate (DG); field-effect transistor (FET); nanowire (NW)
Citation
IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.10, no.6, pp 1405 - 1411
Pages
7
Journal Title
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume
10
Number
6
Start Page
1405
End Page
1411
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/27770
DOI
10.1109/TNANO.2011.2157519
ISSN
1536-125X
Abstract
Label-free electrical detection of biomolecules is demonstrated with a double-gate (DG) nanowire (NW) field-effect transistor (FET). Experimental results confirm that detection sensitivity is favorably improved by the increment of NW size in the DG-NWFET, whereas it is enhanced by the decrement of NW size in a conventional single-gate (SG) NWFET. Sensitivity improvement by the augmentation of the NW size in the DG-FET paves the way to overcome technical challenges we face in achieving ultimate miniaturization of the NW size in the SG-FET. This result is comprehensively understood by simple capacitive modeling. The proposed model explains the observed experimental data and provides a design guideline for highly sensitive NW biosensors.
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