N-Input NAND Gate에서 입력조건에 따른 Voltage Transfer Function에 관한 연구A Study of The Voltage Transfer Function Dependent On Input Conditions For An N-Input NAND Gate
- Authors
- 김인모; 송상헌; 김수원
- Issue Date
- Oct-2004
- Publisher
- 대한전기학회
- Keywords
- NAND; Voltage Transfer Funciton; Logic Threshold Voltage; Noise Margin
- Citation
- 전기학회논문지 C권, v.53, no.10-C, pp 510 - 514
- Pages
- 5
- Journal Title
- 전기학회논문지 C권
- Volume
- 53
- Number
- 10-C
- Start Page
- 510
- End Page
- 514
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/28533
- ISSN
- 1229-246X
- Abstract
- In this paper, we analytically examine the voltage transfer function dependent on input conditions for an N-Input NAND Gate. The logic threshold voltage, defined as a voltage at which the input and the output voltage become equal, changes as the input condition changes for a static NAND Gate. The logic threshold voltage has the highest value when all the N-inputs undergo transitions and it has the lowest value when only the last input connected to the last NMOS to ground, makes a transition. This logic threshold voltage difference increases as the number of inputs increases. Therefore, in order to provide a near symmetric voltage transfer function, a multistage N-Input Gate consisting of 2-Input Logic Gates is desirable over a conventional N-Input Gate.
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