졸겔법으로 제조된 Tb-doped PZT 박막의 강유전 특성Ferroelectric Properties of Tb-doped PZT Thin Films Prepared by Sol-gel Process
- Authors
- 손영훈; 김창일; 김경태
- Issue Date
- 2004
- Publisher
- 한국전기전자재료학회
- Keywords
- Ferroelectric; PZT; Dielectric; Sol-gel; Fatigue
- Citation
- 전기전자재료학회논문지, v.17, no.9, pp 947 - 952
- Pages
- 6
- Journal Title
- 전기전자재료학회논문지
- Volume
- 17
- Number
- 9
- Start Page
- 947
- End Page
- 952
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/28570
- ISSN
- 1226-7945
- Abstract
- Tb-doped lead zirconate titanate(Pb(Zr0.6,Ti0.4)O3; PZT) thin films on Pt(111)/Ti/SiO2/Si(100) substrates were fabricated by the sol-gel method. The effect on the structural and electrical properties of films measured according to Tb content. The dielectric and ferroelectric properties of Tb-doped PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. The relative dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.024, respectively. Typical value of the swichable remanent poaraization(2Pr) and the coercive filed of the PZT film capacitor for 0.3 mol% Tb-doped were 61.4 μC/cm2 and 61.9 kV/cm, respectively. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.
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