CF4/Cl2/Ar 유도 결합 플라즈마에 의한 gold 박막의 식각특성
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 장윤성 | - |
dc.contributor.author | 김동표 | - |
dc.contributor.author | 김창일 | - |
dc.contributor.author | 장의구 | - |
dc.date.available | 2019-08-07T04:57:46Z | - |
dc.date.issued | 2003 | - |
dc.identifier.issn | 1226-7945 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/32180 | - |
dc.description.abstract | The etching of Au thin films have been performed in an inductively coupled CF4/Cl2/Ar plasma. The etch rates were measured as CF4 contents added from 0 to 30 % to Cl2/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 30℃. The highest etch rate of the Au thin film was 3700 Åm/min at a 10 % additive CF4 into Cl2/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment. | - |
dc.publisher | 한국전기전자재료학회 | - |
dc.title | CF4/Cl2/Ar 유도 결합 플라즈마에 의한 gold 박막의 식각특성 | - |
dc.title.alternative | Etching Characteristics of Gold Thin Films using Inductively Coupled CF4/Cl2/Ar Plasma | - |
dc.type | Article | - |
dc.identifier.bibliographicCitation | 전기전자재료학회논문지, v.16, no.7 | - |
dc.identifier.kciid | ART000892641 | - |
dc.description.isOpenAccess | N | - |
dc.citation.number | 7 | - |
dc.citation.title | 전기전자재료학회논문지 | - |
dc.citation.volume | 16 | - |
dc.publisher.location | 대한민국 | - |
dc.subject.keywordAuthor | Au | - |
dc.subject.keywordAuthor | Etching | - |
dc.subject.keywordAuthor | Cl2/CF4/Ar | - |
dc.subject.keywordAuthor | ICP | - |
dc.subject.keywordAuthor | XPS | - |
dc.description.journalRegisteredClass | kci | - |
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