CF4/Cl2/Ar 유도 결합 플라즈마에 의한 gold 박막의 식각특성Etching Characteristics of Gold Thin Films using Inductively Coupled CF4/Cl2/Ar Plasma
- Authors
- 장윤성; 김동표; 김창일; 장의구
- Issue Date
- 2003
- Publisher
- 한국전기전자재료학회
- Keywords
- Au; Etching; Cl2/CF4/Ar; ICP; XPS
- Citation
- 전기전자재료학회논문지, v.16, no.7
- Journal Title
- 전기전자재료학회논문지
- Volume
- 16
- Number
- 7
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/32180
- ISSN
- 1226-7945
- Abstract
- The etching of Au thin films have been performed in an inductively coupled CF4/Cl2/Ar plasma. The etch rates were measured as CF4 contents added from 0 to 30 % to Cl2/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 30℃. The highest etch rate of the Au thin film was 3700 Åm/min at a 10 % additive CF4 into Cl2/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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