Cl-based 플라즈마에 의한 YMnO3 박막의 식각 damage에 관한 연구Study on Etching Damages of YMnO3 Thin Films by Cl-based Plasma
- Authors
- 박재화; 김경태; 김동표; 김창일; 장의구
- Issue Date
- 2003
- Publisher
- 한국전기전자재료학회
- Keywords
- Ferroelectric; YMnO3; ICP; Damage; Etching
- Citation
- 전기전자재료학회논문지, v.16, no.6
- Journal Title
- 전기전자재료학회논문지
- Volume
- 16
- Number
- 6
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/32212
- ISSN
- 1226-7945
- Abstract
- Ferroelectric YMnO3 thin films were etched with Ar/Cl2 and CF4/Cl2 inductivly coupled plasma (ICP). The maximum etch rate of YMnO3 thin film was 300 Å/min at a Ar/Cl2 gas mixing ratio of 2/8, a RF power of 800 W, a dc bias of 200 V, a chamber pressure of 15 mTorr, and a substrate temperature of 30 ºC. From the X-ray photoelectron spectroscopy (XPS) analysis, yttrium etched by chemical reactions with Cl radicals assisted by Ar ion bombardments in Ar/Cl2 plasma. In CF4/Cl2 plasma, yttrium are remained on the etched surface of YMnO3 and formed of nonvolatile YFx compounds Manganese etched effectively by chemical reactions with Cl and F radicals. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the YMnO3 thin film etched in Ar/Cl2 plasma shows lower value than that in CF4/Cl2 plasma. It indicates that the crystallinty of YMnO3 thin film is more easily damaged by the Ar ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.
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