유도결합 CF4/Ar 플라즈마에 의한 Bi4-xLaxTi3O12 박막의 식각 표면 반응Surface Reactions on the Bi4-xLaxTi3O12 Thin Films Etched in Inductively Coupled CF4/Ar Plasma
- Authors
- 김동표; 김경태; 김창일
- Issue Date
- 2003
- Publisher
- 한국전기전자재료학회
- Keywords
- BLT; OES; XPS; CF4/Ar
- Citation
- 전기전자재료학회논문지, v.16, no.5
- Journal Title
- 전기전자재료학회논문지
- Volume
- 16
- Number
- 5
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/32235
- ISSN
- 1226-7945
- Abstract
- Etching species in CF4/Ar plasma and the behavior of etching rate of Bi4-xLaxTi3O12 (BLT) films were investigated in inductively coupled plasma (ICP) reactor in terms of etch parameters. The etching rate as functions of CF4 contents showed the maximum 803 /min at 20% CF4 addition in CF4/Ar plasma. The increase of rf power and dc bias voltage caused to an increase of etch rate. The variation of relative volume densities for F and Ar atoms were measured with the optical emission spectroscopy (OES). The chemical states of BLT were investigated with using X-ray photoelectron spectroscopy (XPS). XPS narrow scan analysis shows that La-fluorides remained on the etched surface. The presence of maximum etch rate at CF4(20%)/Ar(80%) may be explained by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction. The roles of Ar ion bombardment include destruction of metal (Bi, La, Ti)-O bonds as well as assistant for chemical reaction of metals with fluorine atoms.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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