High-Speed and Low-Temperature Atmospheric Photo-Annealing of Large-Area Solution-Processed IGZO Thin-Film Transistors by Using Programmable Pulsed Operation of Xenon Flash Lamp
- Authors
- Jo, Jeong-Wan; Kim, Kyung-Tae; Park, Ho-Hyun; Park, Sung Kyu; Heo, Jae Sang; Kim, Insoo; Lee, Myung-Jae
- Issue Date
- Jun-2019
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Metal-oxide semiconductors; Low temperature solution-process; Thin-film transistor; Flash lamp annealing; Roll-to-roll process
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.74, no.11, pp 1052 - 1058
- Pages
- 7
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 74
- Number
- 11
- Start Page
- 1052
- End Page
- 1058
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/32764
- DOI
- 10.3938/jkps.74.1052
- ISSN
- 0374-4884
1976-8524
- Abstract
- An efficient photo-annealing approach for high-performance solution-processed metal-oxide thin film transistors (TFTs) was demonstrated by using programmable pulse operation of xenon flash lamp. The flash lamp annealing (FLA) process could offer not only low-temperature (approximate to 100 degrees C) processing but also ultra-fast annealing speed of the order of seconds under air ambient conditions. Solution-processed amorphous indium-gallium-zinc-oxide (-IGZO) TFTs implemented by the FLA process typically exhibited much improved electrical performance such as saturation mobility of >10.8 cm(2)V(-11)s(-1), ION/IOPP of >10(8), and subthreshold slope of as steep as 0.24 V/dec. X-ray photoelectron spectroscopy analysis of a-IGZO films indicates that the FLA can provide sufficient activation energy for rapid formation of solid a-IGZO bonds within 30 s. The high-quality metal-oxide films achieved by an atmospheric and low temperature FLA method may represent a significant advance for scalable fabrication of flexible and printed metal-oxide electronics.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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