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Wide frequency switchable microwave resonator by injecting eutectic gallium indium into microfluidic defected ground structure
- Authors
- Kim, Y.; Lim, D.; Park, E.; Tentzeris, M.M.; Lim, Sungjoon
- Issue Date
- Oct-2019
- Publisher
- John Wiley and Sons Inc.
- Keywords
- defected ground structure; frequency switching; liquid metal; microfluidic channel; resonator
- Citation
- Microwave and Optical Technology Letters, v.61, no.10, pp 2405 - 2409
- Pages
- 5
- Journal Title
- Microwave and Optical Technology Letters
- Volume
- 61
- Number
- 10
- Start Page
- 2405
- End Page
- 2409
- ISSN
- 0895-2477
1098-2760
- Abstract
- This article proposes a frequency switchable microwave resonator based on a microfluidic defected ground structure (m-DGS) that provides wider frequency tuning ratio. Because its resonant frequency is determined from the DGS geometry, the resonant frequency can be switched by injecting EGaIn liquid metal into the m-DGS to decrease the effective inductance and hence increase resonant frequency to 7.7 GHz from 3 GHz, that is, 88% tuning range. The proposed idea is demonstrated numerically and experimentally. © 2019 Wiley Periodicals, Inc.
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