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Ku-band bandpass filters using novel micromachined substrate integrated waveguide structure with embedded silicon vias in benzocyclobutene dielectrics

Authors
Hyeon, Ik-JaePark, Woo-YoungLim, SungjoonBaek, Chang-Wook
Issue Date
Dec-2012
Publisher
ELSEVIER SCIENCE SA
Keywords
Substrate integrated waveguide (SIW); Bandpass filter (BPF); Complementary split-ring resonators (CSRRs); Micromachining process
Citation
SENSORS AND ACTUATORS A-PHYSICAL, v.188, pp 463 - 470
Pages
8
Journal Title
SENSORS AND ACTUATORS A-PHYSICAL
Volume
188
Start Page
463
End Page
470
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/37189
DOI
10.1016/j.sna.2012.02.012
ISSN
0924-4247
Abstract
In this paper, Ku-band bandpass filters (BPFs) based on a novel micromachined substrate integrated waveguide (SIW) platform with square complementary split-ring resonators (CSRRs) have been demonstrated. The proposed SIW platform adopts embedded metal-coated silicon vias in benzocyclobutene (BCB) dielectric substrate filled into a silicon trench. Unlike conventional SIW BPFs using classical microwave substrates, the proposed BPFs can be integrated with silicon-based circuits or RF MEMS devices since the fabrication process is fully compatible with the silicon process while providing low-loss properties of the waveguide. Three types of BPFs using CPW and microstrip feeding configurations have been designed and fabricated. The microstrip-fed BPF using the same CSRRs shows an improved insertion loss of 1.39 dB at 13.8 GHz with reduced device size compared to the CPW-fed BPF which has an insertion loss of 2.27 dB at 14.1 GHz. The microstrip-fed BPF with different CSRR configurations designed to improve shape factor shows an attenuation factor of 124 dB/GHz, with an insertion loss of 2.3 dB at 21.2 GHz. (C) 2012 Elsevier B.V. All rights reserved.
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