Bulk charge-transfer doping of amorphous metal oxide: fullerene blends for solution-processed amorphous indium zinc oxide thin-film transistors
- Authors
- Le, Minh Nhut; Kim, Hyeongyeon; Kang, Yeo Kyung; Song, Youngmin; Guo, Xugang; Ha, Young-Geun; Kim, Choongik; Kim, Myung-Gil
- Issue Date
- Sep-2019
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY C, v.7, no.34, pp 10635 - 10641
- Pages
- 7
- Journal Title
- JOURNAL OF MATERIALS CHEMISTRY C
- Volume
- 7
- Number
- 34
- Start Page
- 10635
- End Page
- 10641
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/38476
- DOI
- 10.1039/c9tc01801h
- ISSN
- 2050-7526
2050-7534
- Abstract
- The successful implementation of amorphous In-Ga-Zn-O with a mobility >10 cm(2) V-1 s(-1) in the electronic industry indicates the significant potential of the amorphous oxide semiconductor (AOS) materials in the next-generation optoelectronics. However, the low-cost, large-area solution processes for AOS materials require high annealing temperatures (>400 degrees C), which is not favorable for flexible substrate application. Moreover, the lack of a doping method for AOS materials possessing an amorphous disorder structure further limits its application. In this study, a fullerene derivative (C60-malonic acid) was employed as the bulk charge-transfer dopant in solution-processed amorphous indium-zinc oxide (a-IZO) thin-film transistors. With the facile bulk charge-transfer doping from a mixed precursor solution, high-performance thin-film transistors were realized at a low annealing temperature of 250 degrees C. At an optimized doping concentration, the carrier mobility increased from 1.21 cm(2) V-1 s(-1) for an undoped a-IZO film to 2.42 cm(2) V-1 s(-1) for a doped a-IZO one. Furthermore, optimized doping enhanced the device stability under the bias stress condition. Therefore, the threshold voltage (V-th) shift during the positive bias stress condition (V-G = 50 V; V-DS = 25 V) for 1000 s drastically reduced from 28.9 V for an undoped device to 16.0 V for a device with optimized doping (1%).
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