High-Performance Hybrid Complementary Inverter with N-Type InGaZnO and P-Type WSe2 Thin-Film Transistors
- Authors
- Kwon, Hyuck-In
- Issue Date
- Oct-2017
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Hybrid Complementary Logic Inverter; A-IGZO TFT; WSe2 TFT; Large Voltage Gain
- Citation
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.12, no.10, pp 1119 - 1122
- Pages
- 4
- Journal Title
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
- Volume
- 12
- Number
- 10
- Start Page
- 1119
- End Page
- 1122
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/3911
- DOI
- 10.1166/jno.2017.2106
- ISSN
- 1555-130X
1555-1318
- Abstract
- In this paper, we introduce a novel hybrid complementary logic inverter with an n-type amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) and a p-type tungsten diselenide (WSe2) TFT, aiming at future applications in logic circuits. The implemented hybrid inverter exhibits full-swing characteristics, and displays high electrical performances, with a large voltage gain of similar to 27.2 V/V. It also exhibits good noise margins, which are close to one-half of the supply voltage (V-DD) of V-DD = 5 V. The experimental results demonstrate the feasibility of realizing the high-performance transition metal dichalcogenides-oxide hybrid complementary logic circuits.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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