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Enhanced In-Plane Thermoelectric Figure of Merit for p-Type Bi0.5Sb1.5Te3 Thin Films with Temperature Dependence Approaching 450 K
- Authors
- Park, No-Won; Ahn, Jay-Young; Lee, Sang Kwon
- Issue Date
- Oct-2017
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Figure-of-Merit; Thermal Conductivity; Seebeck Coefficient; Electrical Conductivity; 3-omega Technique; Thermal Transport
- Citation
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.12, no.10, pp 1108 - 1113
- Pages
- 6
- Journal Title
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
- Volume
- 12
- Number
- 10
- Start Page
- 1108
- End Page
- 1113
- ISSN
- 1555-130X
1555-1318
- Abstract
- Bi0.5Sb1.5Te3 (BST) materials are widely used p-type thermoelectric (TE) materials with high anisotropy. Thin-film-based TE materials are also highly useful for future TE devices. However, very limited information is available regarding the in-plane figure of merit (ZT) of BST thin films, including the in-plane thermal conductivity, Seebeck coefficient, and electrical conductivity of the film. This work examines the in-plane ZT properties of p-Bi0.5Sb1.5Te3 thin films prepared by radiofrequency sputtering at room temperature. Based on the measured thermoelectric properties including the in-plane thermal conductivity, Seebeck coefficient, and electrical conductivity, a maximum ZT value of 1.01 at 390 K was obtained for these annealed p-BST thin films.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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