Damascene Cu electrodeposition on metal organic chem-ical vapor deposition-grown Ru thin film barrier
- Authors
- Cho, SK; Kim, Soo-Kil; Han, H; Kim, JJ; Oh, SM
- Issue Date
- Nov-2004
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.22, no.6, pp 2649 - 2653
- Pages
- 5
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 22
- Number
- 6
- Start Page
- 2649
- End Page
- 2653
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/42424
- DOI
- 10.1116/1.1819911
- ISSN
- 1071-1023
2166-2746
- Abstract
- Ru thin film grown by metal organic chemical vapor deposition (MOCVD) was applied in this study as a substrate for superconformal Cu electrodeposition as well as a Cu diffusion barrier at a Cu/Ru/SiO2/Si multilayer system for microelectronics. Bis (ethyl-pi-cyclopentadienyl) Ru-based MOCVD Ru thin film had a roughness of about 12% of its thickness and well-developed textures with high purity. It also showed good step coverage in damascene trench structure. Pd catalyst-mediated Cu electrodeposition on Ru surface. accomplished formation of continuous Cu film. For Gap filling in single damascene structure. bumps indicative of bottom-up acceleration and superfilling were observed during two-step Cu electrodeposition on Ru substrate which involved seeding and filling with conventional three additives system. 30 nm-thick Ru film effectively worked as a barrier for interdiffusion and/or reaction between layers even after annealing at 800 degreesC for 30 min. With the exception of slight agglomeration of Cu at elevated temperature, no silicidation or AES-profile broadening was observed in a Cu/Ru/SiO2/Si system. (C) 2004 American Vacuum Society.
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