Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments
DC Field | Value | Language |
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dc.contributor.author | Bae, Sang-Dae | - |
dc.contributor.author | Kwon, Soo-Hun | - |
dc.contributor.author | Jeong, Hwan-Seok | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.date.available | 2019-03-08T08:37:25Z | - |
dc.date.issued | 2017-07 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.issn | 1361-6641 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/4266 | - |
dc.description.abstract | In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 x 10(6)) and a low off-current (1.2 x 10(-12) A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/1361-6641/aa72b8 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.32, no.7 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000404623400001 | - |
dc.identifier.scopusid | 2-s2.0-85023183392 | - |
dc.citation.number | 7 | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 32 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordAuthor | tin oxide | - |
dc.subject.keywordAuthor | argon plasma treatment | - |
dc.subject.keywordAuthor | p-type metal-oxide semiconductor | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordPlus | HYDROGEN-CONTAINING ATMOSPHERE | - |
dc.subject.keywordPlus | SN/SNO2 MIXED TARGET | - |
dc.subject.keywordPlus | SNO FILMS | - |
dc.subject.keywordPlus | SPUTTERING DEPOSITION | - |
dc.subject.keywordPlus | PHASE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | TFTS | - |
dc.subject.keywordPlus | ZNO | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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