Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments
- Authors
- Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In
- Issue Date
- Jul-2017
- Publisher
- IOP PUBLISHING LTD
- Keywords
- tin oxide; argon plasma treatment; p-type metal-oxide semiconductor; thin-film transistor
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.32, no.7
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 32
- Number
- 7
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/4266
- DOI
- 10.1088/1361-6641/aa72b8
- ISSN
- 0268-1242
1361-6641
- Abstract
- In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 x 10(6)) and a low off-current (1.2 x 10(-12) A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.
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