Nanocluster-based ultralow-temperature driven oxide gate dielectrics for high-performance organic electronic devicesopen access
- Authors
- Jo, Jeong-Wan; Kang, Jingu; Kim, Kyung-Tae; Kang, Seung-Han; Shin, Jae-Cheol; Shin, Seung Beom; Kim, Yong-Hoon; Park, Sung Kyu
- Issue Date
- Dec-2020
- Publisher
- MDPI AG
- Keywords
- Deep ultraviolet (DUV) photochemical activation; Low-temperature process; Organic thin-film transistor; Single-crystal organic semiconductor; Solution-processed metal-oxide gate dielectrics
- Citation
- Materials, v.13, no.23, pp 1 - 10
- Pages
- 10
- Journal Title
- Materials
- Volume
- 13
- Number
- 23
- Start Page
- 1
- End Page
- 10
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/44093
- DOI
- 10.3390/ma13235571
- ISSN
- 1996-1944
1996-1944
- Abstract
- The development of novel dielectric materials with reliable dielectric properties and low-temperature processibility is crucial to manufacturing flexible and high-performance organic thin-film transistors (OTFTs) for next-generation roll-to-roll organic electronics. Here, we investigate the solution-based fabrication of high-k aluminum oxide (Al2O3) thin films for high-performance OTFTs. Nanocluster-based Al2O3 films fabricated by highly energetic photochemical activation, which allows low-temperature processing, are compared to the conventional nitrate-based Al2O3 films. A wide array of spectroscopic and surface analyses show that ultralow-temperature photochemical activation (<60 °C) induces the decomposition of chemical impurities and causes the densification of the metal-oxide film, resulting in a highly dense high-k Al2O3 dielectric layer from Al-13 nanocluster-based solutions. The fabricated nanocluster-based Al2O3 films exhibit a low leakage current density (<10–7 A/cm2) at 2 MV/cm and high dielectric breakdown strength (>6 MV/cm). Using this dielectric layer, precisely aligned microrod-shaped 2,7-dioctyl[1]benzothieno [3,2-b][1] benzothiophene (C8-BTBT) single-crystal OTFTs were fabricated via solvent vapor annealing and photochemical patterning of the sacrificial layer. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.
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