Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts
DC Field | Value | Language |
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dc.contributor.author | Cho, Sang-Hyeok | - |
dc.contributor.author | Cho, Kwanghee | - |
dc.contributor.author | Park, No-Won | - |
dc.contributor.author | Park, Soonyong | - |
dc.contributor.author | Koh, Jung-Hyuk | - |
dc.contributor.author | Lee, Sang-Kwon | - |
dc.date.available | 2019-03-08T08:56:06Z | - |
dc.date.issued | 2017-05 | - |
dc.identifier.issn | 1556-276X | - |
dc.identifier.issn | 1556-276X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/4431 | - |
dc.description.abstract | We report p-type tin monoselenide (SnSe) single crystals, grown in double-sealed quartz ampoules using a modified Bridgman technique at 920 degrees C. X-ray powder diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX) measurements clearly confirm that the grown SnSe consists of single-crystal SnSe. Electrical transport of multi-layer SnSe nanoflakes, which were prepared by exfoliation from bulk single crystals, was conducted using back-gated field-effect transistor (FET) structures with Au and Ti contacts on SiO2/Si substrates, revealing that multi-layer SnSe nanoflakes exhibit p-type semiconductor characteristics owing to the Sn vacancies on the surfaces of SnSe nanoflakes. In addition, a strong carrier screening effect was observed in 70-90-nm-thick SnSe nanoflake FETs. Furthermore, the effect of the metal contacts to multi-layer SnSe nanoflake-based FETs is also discussed with two different metals, such as Ti/Au and Au contacts. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | SPRINGER | - |
dc.title | Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts | - |
dc.type | Article | - |
dc.identifier.doi | 10.1186/s11671-017-2145-2 | - |
dc.identifier.bibliographicCitation | NANOSCALE RESEARCH LETTERS, v.12 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.wosid | 000402198200004 | - |
dc.identifier.scopusid | 2-s2.0-85019661754 | - |
dc.citation.title | NANOSCALE RESEARCH LETTERS | - |
dc.citation.volume | 12 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Tin chalcogenides | - |
dc.subject.keywordAuthor | Tin monoselenide (SnSe) | - |
dc.subject.keywordAuthor | Carrier screening effect | - |
dc.subject.keywordAuthor | Field-effect transistors | - |
dc.subject.keywordAuthor | 2-D materials | - |
dc.subject.keywordAuthor | Metal work function | - |
dc.subject.keywordPlus | SINGLE-CRYSTAL SNSE | - |
dc.subject.keywordPlus | SELENIDE THIN-FILMS | - |
dc.subject.keywordPlus | N-TYPE SNSE | - |
dc.subject.keywordPlus | THERMOELECTRIC PERFORMANCE | - |
dc.subject.keywordPlus | THERMAL-CONDUCTIVITY | - |
dc.subject.keywordPlus | PHASE-TRANSITION | - |
dc.subject.keywordPlus | COMPOSITE FILMS | - |
dc.subject.keywordPlus | NANOSHEETS | - |
dc.subject.keywordPlus | PRECURSORS | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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