Charge Transport Mechanism in p-Channel Tin Monoxide Thin-Film Transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Hee-Joong | - |
dc.contributor.author | Jeong, Chan-Yong | - |
dc.contributor.author | Bae, Sang-Dae | - |
dc.contributor.author | Lee, Jeong-Hwan | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.date.available | 2019-03-08T08:57:55Z | - |
dc.date.issued | 2017-04 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/4612 | - |
dc.description.abstract | In this letter, we report on the charge transport mechanism in the p-type tin monoxide (SnO) thin-film transistors (TFTs)over a wide range of operation regimes and temperatures. From the temperature-dependent field-effect conductance measurements, the variable range hopping and the trap-limited band transport are considered as dominant charge transport mechanisms in the SnO TFT at temperatures below similar to 200 K (-73 degrees C) and above similar to 273 K ( 0 degrees C), respectively, in the subthreshold and transition regions. In the above-threshold region, the intrinsic field-effect mobility (mu(FEi)) decreases with an increase in temperature with a prefactor. similar to-0.36 in the mu(FEi) similar to T-gamma. law at temperatures (Ts) between RT and 353 K ( 80 degrees C). The observed temperature and gate overdrive voltage dependence of mu(FEi) suggests that the acoustic phonon scatteringis the dominant physical mechanism limiting mu(FEi) in the p-type SnO TFT at realistic operating conditions [ in the above-threshold region and at temperatures ranging from RT to 353 K (80 degrees C)]. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Charge Transport Mechanism in p-Channel Tin Monoxide Thin-Film Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LED.2017.2672730 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.38, no.4, pp 473 - 476 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000398905400016 | - |
dc.identifier.scopusid | 2-s2.0-85017588988 | - |
dc.citation.endPage | 476 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 473 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 38 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | P-type tin monoxide (SnO) | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordAuthor | charge transport mechanism | - |
dc.subject.keywordAuthor | realistic operating condition | - |
dc.subject.keywordAuthor | acoustic phonon scattering | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | PHASE | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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