Charge Transport Mechanism in p-Channel Tin Monoxide Thin-Film Transistors

Abstract

In this letter, we report on the charge transport mechanism in the p-type tin monoxide (SnO) thin-film transistors (TFTs)over a wide range of operation regimes and temperatures. From the temperature-dependent field-effect conductance measurements, the variable range hopping and the trap-limited band transport are considered as dominant charge transport mechanisms in the SnO TFT at temperatures below similar to 200 K (-73 degrees C) and above similar to 273 K ( 0 degrees C), respectively, in the subthreshold and transition regions. In the above-threshold region, the intrinsic field-effect mobility (mu(FEi)) decreases with an increase in temperature with a prefactor. similar to-0.36 in the mu(FEi) similar to T-gamma. law at temperatures (Ts) between RT and 353 K ( 80 degrees C). The observed temperature and gate overdrive voltage dependence of mu(FEi) suggests that the acoustic phonon scatteringis the dominant physical mechanism limiting mu(FEi) in the p-type SnO TFT at realistic operating conditions [ in the above-threshold region and at temperatures ranging from RT to 353 K (80 degrees C)].