Charge Transport Mechanism in p-Channel Tin Monoxide Thin-Film Transistors
- Authors
- Kim, Hee-Joong; Jeong, Chan-Yong; Bae, Sang-Dae; Lee, Jeong-Hwan; Kwon, Hyuck-In
- Issue Date
- Apr-2017
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- P-type tin monoxide (SnO); thin-film transistor; charge transport mechanism; realistic operating condition; acoustic phonon scattering
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.38, no.4, pp 473 - 476
- Pages
- 4
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 38
- Number
- 4
- Start Page
- 473
- End Page
- 476
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/4612
- DOI
- 10.1109/LED.2017.2672730
- ISSN
- 0741-3106
1558-0563
- Abstract
- In this letter, we report on the charge transport mechanism in the p-type tin monoxide (SnO) thin-film transistors (TFTs)over a wide range of operation regimes and temperatures. From the temperature-dependent field-effect conductance measurements, the variable range hopping and the trap-limited band transport are considered as dominant charge transport mechanisms in the SnO TFT at temperatures below similar to 200 K (-73 degrees C) and above similar to 273 K ( 0 degrees C), respectively, in the subthreshold and transition regions. In the above-threshold region, the intrinsic field-effect mobility (mu(FEi)) decreases with an increase in temperature with a prefactor. similar to-0.36 in the mu(FEi) similar to T-gamma. law at temperatures (Ts) between RT and 353 K ( 80 degrees C). The observed temperature and gate overdrive voltage dependence of mu(FEi) suggests that the acoustic phonon scatteringis the dominant physical mechanism limiting mu(FEi) in the p-type SnO TFT at realistic operating conditions [ in the above-threshold region and at temperatures ranging from RT to 353 K (80 degrees C)].
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