Chemical Reaction on Etched TaNO Thin Film as O-2 Content Varies in CF4/Ar Gas Mixing Plasma
- Authors
- Woo, Jong Chang; Kim, Chang-Il
- Issue Date
- Apr-2017
- Publisher
- KOREAN INST ELECTRICAL & ELECTRONIC MATERIAL ENGINEERS
- Keywords
- TaNO; ICP; XPS
- Citation
- TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, v.18, no.2, pp 74 - 77
- Pages
- 4
- Journal Title
- TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS
- Volume
- 18
- Number
- 2
- Start Page
- 74
- End Page
- 77
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/4657
- DOI
- 10.4313/TEEM.2017.18.2.74
- ISSN
- 1229-7607
2092-7592
- Abstract
- In this work, we investigated the etching characteristics of TaNO thin films and the selectivity of TaNO to SiO2 in an O-2/CF4/Ar inductively coupled plasma (ICP) system. The maximum etch rate of TaNO thin film was 297.1 nm/min at a gas mixing ratio of O-2/CF4/Ar (6: 16: 4 sccm). At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. X-ray photoelectron spectroscopy analysis showed the efficient destruction of the oxide bonds by the ion bombardment, as well as the accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the CF4-containing plasmas.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/4657)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.