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A Study on the Corrosion Effects by Addition Complexing Agent in the Copper CMP Process
- Authors
- Sang-YongKim; Nam-HoonKim; In-PyoKim; Eui-GooChang; Yong-JinSeo; Hun-SangChung
- Issue Date
- 2003
- Publisher
- 한국전기전자재료학회
- Keywords
- Copper-chemical mechanical polishing (Cu-CMP); Corrosion effect; Complexing agent; Oxidizer; Inhibitors; Copper-chemical mechanical polishing (Cu-CMP); Corrosion effect; Complexing agent; Oxidizer; Inhibitors
- Citation
- Transactions on Electrical and Electronic Materials, v.4, no.6, pp 28 - 31
- Pages
- 4
- Journal Title
- Transactions on Electrical and Electronic Materials
- Volume
- 4
- Number
- 6
- Start Page
- 28
- End Page
- 31
- ISSN
- 1229-7607
2092-7592
- Abstract
- Copper CMP in terms of the effect of slurry chemicals (oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. Corrosion inhibitors, benzotriazole (BTA) and tolytriazol (TTA) were used to control the removal rate and avoid isotropic etching. When complexing agent is added with H2O2 2 wt% in the slurry, the corrosion rate was presented very well. In the case of complexing agent, it was estimated that the proper concentration is 1 wt%, because the addition of tartaric acid to alumina slurry causes low pH and the slurry dispersion stability become unstable. There was not much change of the removal rate. It was assumed that BTA 0.05 wt% is suitable. Most of all, it was appeared that BTA is possible to be replaced by TTA. TTA was distinguished for the effect among complexing agents.
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