Low-temperature sol-gel derived ultra-flexible metal-oxide thin-film-transistors and their applications

Abstract

Solution-processed metal-oxide thin-film transistors (TFTs) were fabricated for flexible integrated circuits. As gate dielectric layer, a transparent insulating oxide, ZAO (Zirconium incorporated aluminum oxide) has been employed instead of using pristine AlOx (Aluminum oxide). Using the ZAO gate dielectric, field-effect mobility of 6.21 cm(2)/Vs and hysteresis-free property have achieved by improving the interface between the gate dielectric and the IGZO (Indium gallium zinc oxide) semiconductor layer. For the surface modification, a heterogeneous ZAO gate dielectric has been used. With the IGZO TFTs employing ZAO gate dielectric, an ultra-flexible 7-stage ring-oscillator array was fabricated.