1/f Noise Characteristics of P-Channel Tin Monoxide Thin-Film Transistors
- Authors
- Jeong, Chan-Yong; Kim, Hee-Joong; Lee, Jeong-Hwan; Bae, Sang-Dae; Kwon, Hyuck-In
- Issue Date
- Jul-2016
- Publisher
- IEEE
- Citation
- 2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), pp 143 - 145
- Pages
- 3
- Journal Title
- 2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD)
- Start Page
- 143
- End Page
- 145
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/48264
- DOI
- 10.1109/AM-FPD.2016.7543645
- ISSN
- 0000-0000
- Abstract
- In this work, we investigate the low-frequency noise (LFN) properties of p-type tin monoxide (SnO) thin-film transistors (TFTs). The LFN from the p-type SnO TFT is successfully interpreted by the correlated carrier number-mobility fluctuation model. The density of near-interface insulator traps that can exchange charge carriers with the underlying SnO channel layer is found to be 5.2x 10(21) eV(-1)cm(-3), which is about one or two orders of magnitude higher than that of the n-type amorphous indium-gallium-zinc oxide TFTs. The high density of near-interface insulator trap from the SnO TFT is considered to be a result of the high degree of disorder of the SnO channel layer.
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