Electrical instabilities and low-frequency noise in InGaZnO thin film transistors
- Authors
- Lee, J.-H.; Kwon, Hyuck-In; Shin, H.; Park, B.-G.; Park, Y.J.
- Issue Date
- Jul-2010
- Citation
- Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
- Journal Title
- Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/48451
- DOI
- 10.1109/IPFA.2010.5532306
- ISSN
- 0000-0000
- Abstract
- Our recent works concerning the electrical instability and low frequency noise (LFN) behaviors of a-IGZO TFTs are reviewed and significant results are reported. The experimental and modeling study of bias-stress-induced threshold voltage instabilities shows that the threshold voltage shift is mainly attributed to the electron injection from the channel into interface/dielectric traps in a-IGZO TFTs. By comparing the results from devices with different dielectrics, we find that the magnitude and time dependence of the threshold voltage shift are strongly dependent on the gate dielectric material in a-IGZO TFTs. The measured noise power spectral density shows that the LFN in a-IGZO TFTs obeys the classical 1/f noise theory, i.e., fits well to a 1/f γ power law with γ ∼ 1 in the low frequency range. From the dependence of normalized noise power spectral density on the gate voltage, the bulk mobility fluctuation is considered as a dominant LFN mechanism of a-IGZO TFTs in the linear operation regime.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/48451)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.