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Current-loop Gate Driving Circuit for Solid-state Marx Modulator with Fast-rising Nanosecond Pulses

Authors
Lee, S.-H.Song, S.-H.Ryoo, H.-J.
Issue Date
Aug-2021
Publisher
Institute of Electrical and Electronics Engineers Inc.
Keywords
Capacitors; Discharges (electric); Fast risetime; gate driving circuit; Insulated gate bipolar transistors; Inverters; Logic gates; narrow pulse width; solid-state Marx modulator; Switches; Synchronization
Citation
IEEE Transactions on Power Electronics, v.36, no.8, pp 8953 - 8961
Pages
9
Journal Title
IEEE Transactions on Power Electronics
Volume
36
Number
8
Start Page
8953
End Page
8961
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/48495
DOI
10.1109/TPEL.2021.3051041
ISSN
0885-8993
1941-0107
Abstract
When designing solid-state Marx modulators (SSMMs) with fast-rising nanosecond pulses, the gate driving scheme for pulse discharge switches is one of the most important aspects to be considered. In this study, we propose a nanosecond current-loop gate driving circuit for a synchronized fast gate drive of pulse discharge switches. The proposed circuit comprises an inverter, a current-loop cable, and discharge switch drivers. The inverter generates bipolar pulses that simultaneously provide driving power and fast triggering signals to all discharge switch drivers through the cable. The triggered discharge switch drivers rapidly turn on/off all discharge switches with accurate synchronization. In the inverter and discharge switch drivers, the fast gate-driving methods were used to overcome parasitic inductances and realize nanosecond operation. The concept and operational principles of the proposed gate driving scheme are presented. To validate the performance and reliability of the SSMM using the proposed current-loop gate driving circuit, a laboratory test on a 10-kV–70-A–50-kHz SSMM prototype was conducted, and the results were discussed. IEEE
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Ryoo, Hong Je
공과대학 (에너지시스템 공학부)
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