Focused ion beam-assisted manipulation of single and double beta-SiC nanowires and their thermal conductivity measurements by the four-point-probe 3-omega method
- Authors
- Lee, K. M.; Choi, T. Y.; Lee, S. K.; Poulikakos, D.
- Issue Date
- Mar-2010
- Publisher
- IOP PUBLISHING LTD
- Citation
- NANOTECHNOLOGY, v.21, no.12
- Journal Title
- NANOTECHNOLOGY
- Volume
- 21
- Number
- 12
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49632
- DOI
- 10.1088/0957-4484/21/12/125301
- ISSN
- 0957-4484
1361-6528
- Abstract
- Control of one-dimensional (1D) nanostructures is demonstrated in this paper by selectively placing and aligning silicon carbide (beta-SiC) nanowires (NWs). We developed a reliable and highly reproducible way of placing a single or double SiC NW on pre-patterned electrodes by using a focused ion beam and a nanomanipulator. 3-omega signals obtained by the four-point-probe method were used in measuring the thermal conductivity of the NWs. The thermal conductivities of the placed single and double beta-SiC NWs were obtained at 82 +/- 6 WmK(-1) and 73 +/- 5 WmK(-1), respectively. The proposed technique offers new possibilities for manipulating and evaluating 1D nanoscale materials.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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