The synthesis of ZnO nanowires and their subsequent use in high-current field-effect transistors formed by dielectrophoresis alignment
- Authors
- Lee, Seung-Yong; Urnar, Ahmad; Suh, Duk-Il; Park, Ji-Eun; Hahn, Yoon-Bong; Ahn, Jeong-Yong; Lee, Sang-Kwon
- Issue Date
- Feb-2008
- Publisher
- ELSEVIER
- Keywords
- dielectrophoresis; ZnO nanowires; field-effect transistors (FETs); electrostatic screening effect
- Citation
- PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.40, no.4, pp 866 - 872
- Pages
- 7
- Journal Title
- PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
- Volume
- 40
- Number
- 4
- Start Page
- 866
- End Page
- 872
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49652
- DOI
- 10.1016/j.physe.2007.10.094
- ISSN
- 1386-9477
1873-1759
- Abstract
- The synthesis of zinc oxide (ZnO) nanowires was achieved by thermal evaporation on a steel alloy substrate. Various material characteristics such as X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), and Raman scattering analysis indicated that the synthesized ZnO nanowires were single crystalline with a wurtzite hexagonal phase, and were preferentially synthesized in the c-axis direction. In addition, the straightforward and successful alternating current (AC) dielectrophoresis (DEP) method that can be used to align and manipulate ZnO nanowires as well as to fabricate high-performance multiple-channel field-effect transistors (FETs) with a back-gate structure were also investigated. The DEP results indicated that the number of aligned ZnO nanowires increased with the increasing AC voltages. Moreover, we demonstrated that the DEP-prepared multiple ZnO nanowires FETs can manage on-current exceeding -similar to 1 mu A at a low-bias voltage. Our approach to build up the high-current nano-FETs offers substantial opportunities for further practical electronics and photonics device applications. (c) 2007 Elsevier B.V. All rights reserved.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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