Multiple ZnO nanowires field-effect transistors
DC Field | Value | Language |
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dc.contributor.author | Suh, Duk-Il | - |
dc.contributor.author | Lee, Seung-Yong | - |
dc.contributor.author | Hyung, Jung-Hwan | - |
dc.contributor.author | Kim, Tae-Hong | - |
dc.contributor.author | Lee, Sang-Kwon | - |
dc.date.accessioned | 2021-09-23T06:40:30Z | - |
dc.date.available | 2021-09-23T06:40:30Z | - |
dc.date.issued | 2008-01 | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.issn | 1932-7455 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49653 | - |
dc.description.abstract | We report on the multiple ZnO nanowires field-effect transistors (FETs), which were formed by assembling as-synthesized ZnO nanowires on a SiO2/Si substrate using an optimized alternating current (AC) dielectrophoresis (DEP) technique in three-probe back-gate geometry. The AC DEP was optimized with a bias voltage of 10 Vp-p at a frequency of 10 kHz. Our multiple ZnO nanowires FETs containing ca. 50 similar to 65 nanowires in one device exhibited excellent electrical characteristics with a transconductance of 3 similar to 11.5 mu S at a drain voltage of 1 similar to 5 V, a mobility of similar to 30 cm(2)/V.s, and a carrier concentration of 9.4 x 10(17) cm(-3). For a comparison study, we also present conventional single ZnO nanowire FETs prepared by e-beam lithography with a back-gate structure. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Multiple ZnO nanowires field-effect transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/jp709673s | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICAL CHEMISTRY C, v.112, no.4, pp 1276 - 1281 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000252619100053 | - |
dc.citation.endPage | 1281 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1276 | - |
dc.citation.title | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.citation.volume | 112 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordPlus | GALLIUM NITRIDE NANOWIRES | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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