Multiple ZnO nanowires field-effect transistors

Abstract

We report on the multiple ZnO nanowires field-effect transistors (FETs), which were formed by assembling as-synthesized ZnO nanowires on a SiO2/Si substrate using an optimized alternating current (AC) dielectrophoresis (DEP) technique in three-probe back-gate geometry. The AC DEP was optimized with a bias voltage of 10 Vp-p at a frequency of 10 kHz. Our multiple ZnO nanowires FETs containing ca. 50 similar to 65 nanowires in one device exhibited excellent electrical characteristics with a transconductance of 3 similar to 11.5 mu S at a drain voltage of 1 similar to 5 V, a mobility of similar to 30 cm(2)/V.s, and a carrier concentration of 9.4 x 10(17) cm(-3). For a comparison study, we also present conventional single ZnO nanowire FETs prepared by e-beam lithography with a back-gate structure.