Multiple ZnO nanowires field-effect transistors
- Authors
- Suh, Duk-Il; Lee, Seung-Yong; Hyung, Jung-Hwan; Kim, Tae-Hong; Lee, Sang-Kwon
- Issue Date
- Jan-2008
- Publisher
- AMER CHEMICAL SOC
- Citation
- JOURNAL OF PHYSICAL CHEMISTRY C, v.112, no.4, pp 1276 - 1281
- Pages
- 6
- Journal Title
- JOURNAL OF PHYSICAL CHEMISTRY C
- Volume
- 112
- Number
- 4
- Start Page
- 1276
- End Page
- 1281
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49653
- DOI
- 10.1021/jp709673s
- ISSN
- 1932-7447
1932-7455
- Abstract
- We report on the multiple ZnO nanowires field-effect transistors (FETs), which were formed by assembling as-synthesized ZnO nanowires on a SiO2/Si substrate using an optimized alternating current (AC) dielectrophoresis (DEP) technique in three-probe back-gate geometry. The AC DEP was optimized with a bias voltage of 10 Vp-p at a frequency of 10 kHz. Our multiple ZnO nanowires FETs containing ca. 50 similar to 65 nanowires in one device exhibited excellent electrical characteristics with a transconductance of 3 similar to 11.5 mu S at a drain voltage of 1 similar to 5 V, a mobility of similar to 30 cm(2)/V.s, and a carrier concentration of 9.4 x 10(17) cm(-3). For a comparison study, we also present conventional single ZnO nanowire FETs prepared by e-beam lithography with a back-gate structure.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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