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Origin of broad band emissions of 3C-silicon carbide nanowire by temperature and time resolved photoluminence study
- Authors
- Lee, K. M.; Hwang, J. Y.; Urban, B.; Singh, A.; Neogi, A.; Lee, S. K.; Choi, T. Y.
- Issue Date
- Feb-2015
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- 3C-SiC nanowire; High energy emissions from oxide layers; Temperature dependent; photoluminescence; Time-resolved photoluminescence
- Citation
- SOLID STATE COMMUNICATIONS, v.204, pp 16 - 18
- Pages
- 3
- Journal Title
- SOLID STATE COMMUNICATIONS
- Volume
- 204
- Start Page
- 16
- End Page
- 18
- ISSN
- 0038-1098
1879-2766
- Abstract
- As-grown by chemical vapor deposition (CVD) technique, 3C-silicon carbide (3C-SiC) nanowires (NWs) were studied for their energy states by photonic interactions. Temperature dependent photoluminescence (TDPL) was employed in the study. High energy emissions in UV range were found. In order to better understand origins of the high energy emissions, a time resolved photoluminescence (TRPL) study was executed to manifest the nature of these high energy emissions. Observation with high resolution transmission electron microscopy (HRTEM) confirmed the UV emissions were due to the oxide formed on the outer surface of the NWs. (C) 2014 Elsevier Ltd. All rights reserved.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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