Dielectrophoretically aligned GaN nanowire rectifiers
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, S. -Y. | - |
dc.contributor.author | Kim, T. -H. | - |
dc.contributor.author | Suh, D. -I. | - |
dc.contributor.author | Suh, E. -K. | - |
dc.contributor.author | Cho, N. -K. | - |
dc.contributor.author | Seong, W. -K. | - |
dc.contributor.author | Lee, S. -K. | - |
dc.date.accessioned | 2021-09-24T04:40:37Z | - |
dc.date.available | 2021-09-24T04:40:37Z | - |
dc.date.issued | 2007-06 | - |
dc.identifier.issn | 0947-8396 | - |
dc.identifier.issn | 1432-0630 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49805 | - |
dc.description.abstract | We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with three different ac bias voltages (5, 10, and 15V(p-p)), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes showed well-defined current rectifying behavior with a forward voltage drop of 1.2-1.5 V at a current density of 200 A/cm(2). We observed that the GaN NW diode functioned well as a half-wave rectifier. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | SPRINGER HEIDELBERG | - |
dc.title | Dielectrophoretically aligned GaN nanowire rectifiers | - |
dc.type | Article | - |
dc.identifier.doi | 10.1007/s00339-007-3890-3 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.87, no.4, pp 739 - 742 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000245964300025 | - |
dc.citation.endPage | 742 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 739 | - |
dc.citation.title | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | - |
dc.citation.volume | 87 | - |
dc.type.docType | Article | - |
dc.publisher.location | 독일 | - |
dc.subject.keywordPlus | ALIGNMENT | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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