Dielectrophoretically aligned GaN nanowire rectifiers

Abstract

We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with three different ac bias voltages (5, 10, and 15V(p-p)), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes showed well-defined current rectifying behavior with a forward voltage drop of 1.2-1.5 V at a current density of 200 A/cm(2). We observed that the GaN NW diode functioned well as a half-wave rectifier.