Dielectrophoretically aligned GaN nanowire rectifiers
- Authors
- Lee, S. -Y.; Kim, T. -H.; Suh, D. -I.; Suh, E. -K.; Cho, N. -K.; Seong, W. -K.; Lee, S. -K.
- Issue Date
- Jun-2007
- Publisher
- SPRINGER HEIDELBERG
- Citation
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.87, no.4, pp 739 - 742
- Pages
- 4
- Journal Title
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Volume
- 87
- Number
- 4
- Start Page
- 739
- End Page
- 742
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49805
- DOI
- 10.1007/s00339-007-3890-3
- ISSN
- 0947-8396
1432-0630
- Abstract
- We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with three different ac bias voltages (5, 10, and 15V(p-p)), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes showed well-defined current rectifying behavior with a forward voltage drop of 1.2-1.5 V at a current density of 200 A/cm(2). We observed that the GaN NW diode functioned well as a half-wave rectifier.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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