An electrical characterization of a hetero-junction nanowire (NW) PN diode (n-GaN NW/p-Si) formed by dielectrophoresis alignment
- Authors
- Lee, S. -Y.; Kim, T. -H.; Suh, D.-I.; Park, J.-E.; Kim, J.-H.; Youn, C.-J.; Ahn, B.-K.; Lee, S.-K.
- Issue Date
- Feb-2007
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- GaN nanowires; hetero-junction p-n diodes; nanowire rectifiers; contacts
- Citation
- PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.36, no.2, pp 194 - 198
- Pages
- 5
- Journal Title
- PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
- Volume
- 36
- Number
- 2
- Start Page
- 194
- End Page
- 198
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49806
- DOI
- 10.1016/j.physe.2006.10.019
- ISSN
- 1386-9477
1873-1759
- Abstract
- This is a report on the electrical characterization of gallium nitride (GaN) nanowire (NW) p-n junction diodes. These diodes were formed by assembling n-GaN NWs on p-Si (10 0) substrates using alternating current (AC) dielectrophoresis (DEP). The AC DEP was optimized with a bias voltage of 15 Vp-p at a frequency of 1 kHz. The hetero-junction single GaN nanowire p-n diode (n-GaN NW/p-Si) showed well-defined current rectifying behavior with a forward voltage drop of 1.2-2.0 V at a current density of 10-60 A/cm(2). The GaN nanowire p-n diodes had a high parasite resistance in the range of > 470 k Omega. We observed that these high resistances were mostly the result of the metal contacts to the n-GaN NWs. We also found that these parasite resistances were reduced by the formation of an additional capping layer on the top of the n-GaN NW as well as high temperature annealing. (c) 2006 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49806)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.